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2N379 - PNP Transistor (Motorola)
76 A 2N3 (GERMANIUM) For Spe~ifications, See 2N350A Data. 2N378 thru 2N380(GERlt\ANIUM) 2N459,A C(A10S-3)E1 l~ l~... · PNP germanium power transi.

2N3790 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.

2N3791 - PNP POWER TRANSISTORS (Central Semiconductor)
2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,.

2N3792 - PNP SILICON EPITAXIAL BASE POWER TANSISTORS (Seme LAB)
2N3792 MECHANICAL DATA Dimensions in mm(inches) 40.01 (1.575) Max. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 2 1.

2N3796 - Low Power Audio MOSFET (Motorola Semiconductor)
( DataSheet : www..com ) www..com www..com .

2N3797 - Low Power Audio MOSFET (Motorola Semiconductor)
( DataSheet : www..com ) www..com www..com .

2N3798 - SILICON PNP TRANSISTORS (Central Semiconductor)
2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 seri.

2N3798A - PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3798, 2N3798A (SILICON) 2N3799,2N3799A PNP SILICON ANNULAR TRANSISTORS · .. designed for low-level, low-noise amplifier applications. • High Collec.

2N3799A - PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3798, 2N3798A (SILICON) 2N3799,2N3799A PNP SILICON ANNULAR TRANSISTORS · .. designed for low-level, low-noise amplifier applications. • High Collec.

2N3799X - PNP/ LOW NOISE AMPLIFIER TRANSISTOR (Seme LAB)
LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N3799X PNP, LOW NOISE AMPLIFIER TRANSISTOR .